preliminary SIDC23D120H6 edited by infineon technologies ai ps dd hv3, l 4272s , edition 1, 8.01.2002 fast switching diode chip in emcon - technology this chip is used for: eupec power modules and discrete devices features: 1200v emcon technology 120 m chip soft, fast switching low reverse recovery charge small temperature coefficient applications: smps, resonant applications, drives a c chip type v r i f die size package ordering code SIDC23D120H6 1200v 35a 3.5 x 6.5 mm 2 sawn on foil q67041 - a2212 - a001 mechanical parameter: raster size 3.5 x 6.5 area total / act ive 22.75 / 16.5 anode pad size 2.78 x 5.78 mm 2 thickness 120 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 644 pcs passivation frontside photoimide anode metallisation 3200 nm alsicu cathode metallisation 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 mont h at an ambient temperature of 23c
preliminary SIDC23D120H6 edited by infineon technologies ai ps dd hv3, l 4272s , edition 1, 8.01.2002 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 1200 v continuous forward current limited by t jmax i f 35 single pulse forward current (depending on wire bond con figuration) i fsm t p = 10 ms sinusoidal tbd maximum repetitive forward current limited by t jmax i frm 70 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1200v t j =25 c 250 a cathode - anode breakdown voltage v br i r =4ma t j =25c 1200 v forward voltage drop v f i f =35a t j =25 c 1. 6 v dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit t rr1 i f =35a t j =25c tbd reverse recovery time t rr2 di/dt=950a/ m s v r =600v t j =125c ns i rrm1 t j =25c 47 peak recovery current i rrm2 i f =35a di/dt=950a/ m s v r = 600v t j =125c 49.5 a q rr1 t j =25 c 3.75 reverse recovery charge q rr2 i f =35a di/dt=950a/ m s v r = 600v t j =125 c 6.8 c di rr1 /dt t j = 25 c tbd peak rate of fall of reve rse recovery current di rr2 /dt i f =35a di/dt=950a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 c tbd softness s2 i f =35a di/dt=950a/ m s v r = 600v t j =125 c 1
preliminary SIDC23D120H6 edited by infineon technologies ai ps dd hv3, l 4272s , edition 1, 8.01.2002
preliminary SIDC23D120H6 edited by infineon technologies ai ps dd hv3, l 4272s , edition 1, 8.01.2002 further electrical characteristics: this chip data sheet refers t o the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infi neon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warrant ed characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon tech nologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wi de (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness o f that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or ot her persons may be endangered.
|
